Universal motherboard and unique daughterboards for evaluation of included GaN E-HEMT performance in any half-bridge topology
Richardson RFPD Inc. announced the availability and full design support capabilities for a family of evaluation boards from GaN Systems Inc.
The GS665XXX-EVBDB daughterboard evaluation kits consist of two GaN Systems 650 V GaN enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage. The kits allow users to easily evaluate the GaN E-HEMT performance in any half-bridge topology, either with the GS665MB-EVB universal motherboard or the user’s own system design.
According to GaN Systems, additional key features of the new evaluation boards include:
- Vertical-mount style with height of 35 mm, which fits in the majority of 1U designs and allows evaluation of GaN E-HEMTs in traditional through-hole power supply boards
- Current shunt position for switching characterization testing
- Universal form factor and footprint for all products
The GaN Systems evaluation boards available now from Richardson RFPD are:
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Part Number |
Included GaN E-HEMT |
Description |
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GaN E-HEMT 650 V / 15 A, 100 mΩ |
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GaN E-HEMT 650 V / 30 A, 50 mΩ |
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GaN E-HEMT topside cooled 650 V / 30 A, 50 mΩ |
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GaN E-HEMT topside cooled 650 V / 60 A, 25 mΩ |
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Universal 650 V Motherboard |
To find more information, or to purchase these products today online, please use the preceding links to visit the Richardson RFPD website. The devices are also available by calling 1-800-737-6937.
