10 W and 18 W devices available in low-cost, surface mount 32-lead 5 x 5 mm AIN QFN packages
Richardson RFPD Inc. announced the availability and full design support capabilities for two 2.7 to 3.7 GHz packaged GaN power amplifiers from TriQuint.
The TGA2583-SM and TGA2585-SM are designed using TriQuint’s production 0.25-μm GaN on SiC process. The new devices can operate under both pulse and continuous wave (CW) conditions, and both feature RF ports that are fully matched to 50 ohms with integrated DC blocking capacitors for simple system integration. The new GaN PAs are ideally suited to support commercial and defense-related S-band radar applications.
The TGA2583-SM and TGA2585-SM are available in low-cost, surface mount 32-lead 5 x 5 mm AIN QFN packages. Earlier in 2014, Richardson RFPD introduced die versions of these parts: the TGA2583 and TGA2585.
According to TriQuint, additional key features of the 2.7–3.7 GHz GaN PAs include:
|
Part Number |
Frequency Range |
Psat |
Gain |
PAE |
Bias |
Package |
ECCN |
|
2.7–3.7 |
10 |
33 |
>50 |
28 / 175 |
QFN |
EAR99 |
|
|
2.7–3.7 |
18 |
32 |
>50 |
28 / 225 |
QFN |
EAR99 |
|
|
2.7–3.7 |
10 |
33 |
54 |
28 / 175 |
Die |
EAR99 |
|
|
2.7–3.7 |
18 |
33 |
54 |
28 / 225 |
Die |
EAR99 |
To find more information, or to purchase these products today online, please visit the TGA2583-SM and TGA2585-SM webpages. The devices are also available by calling 1-800-737-6937.
