Items Tagged with 'nitride'

The U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded Raytheon Co. a $14.9 million contract to further enhance its process for producing gallium nitride-based semiconductors. The new agreement aims to increase the performance, yield and reliability of Raytheon GaN-based, wideband, monolithic, microwave-integrated circuits and circulator components.

Richardson RFPD Inc. announced the launch of a new website resource focused exclusively on Gallium Nitride (GaN).

Auriga Microwave announced that Dr. Nick Kingsley will host the "Gallium Nitride: Ready for Radar Primetime" workshop at the 6th annual Military Radar Summit. The workshop, to be held on Monday, February 25, at the Ronald Reagan Building in Washington, DC, is part of the three-day summit event that gathers academics and government and industry executives to discuss the latest military radar developments.

Northrop Grumman Corp. has developed a line of gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) for military and commercial uses. These devices represent the first commercial availability of GaN-based components from the company.

While microwave and millimeter wave high-power vacuum electron devices (VEDs) remain “below the radar” of many industry observers, the total available market (TAM) for this segment is nearly $1 billion in 2012.

TriQuint Semiconductor Inc. announced that it has been selected by the Defense Advanced Research Projects Agency (DARPA) to lead a $12.3 million development program focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale Power Conversion (MPC) program. TriQuint’s revolutionary new GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions.

TriQuint Semiconductor Inc. announced that it has signed a Cooperative Research and Development Agreement (CRADA) with the U.S. Army Research Laboratory (ARL) to explore and fabricate new high-frequency and mixed signal integrated circuits (ICs) based on TriQuint gallium nitride (GaN) technology.

Raytheon Co. has been awarded an 18-month, $1.8 million contract by the DARPA to develop next-generation GaN devices bonded to diamond substrates.