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At its annual GF Technology Summit, GlobalFoundries announced the launch of GF Labs, a new program that extends the development horizon of semiconductor technology.
GlobalFoundries Inc. and Motorola Solutions announced a long-term agreement to safeguard the supply of innovative chip solutions for Motorola Solutions’ radios.
The Georgia Tech Research Institute team has demonstrated TRAFFIC as a front-end reconfigurable filter and new efforts are on-going to leverage this technology as an analog signal conditioner within a self-interference cancelling system.
MACOM Technology Solutions Inc. has opened a new EMEA Centre of Excellence for RF, GaN and SiGe technologies at the Novio Tech Campus in Nijmegen, the Netherlands.
ASELSAN, a Turkish company with 40 years experience in defense electronics, is designing and developing 94 GHz, phased array and scalable SiGe integrated circuits that will be used as transmitter (Tx) and receiver (Rx) modules in civil radar systems.
TowerJazz, the global specialty foundry leader, announced its SiGe Terabit Platform targeting high-speed wireline communications for the terabit age. Wireline data traffic is increasing dramatically, with traffic at Google famously increasing by 50 times over the last six to seven years, or at 75 percent per year. Estimates vary, but experts agree on double digit CAGRs and a 2020 market for high speed optical components in excess of $9 billion. TowerJazz addresses this market through a family of customized foundry silicon-germanium (SiGe) BiCMOS technologies and is announcing availability of its highest performance process to date: S4.
GLOBALFOUNDRIES announced new advanced radio-frequency (RF) silicon solutions, further expanding the portfolio of Silicon Germanium (SiGe) power amplifier (PA) technologies designed to enable performance-optimized cellular and Wi-Fi solutions in increasingly sophisticated mobile devices and hardware.
As the result of joining forces within the HiTeK project to combine the advantages of silicon-based CMOS circuits from the IHP with those of indium-phosphide circuits from the FBH, the partners have successfully integrated both circuits on a semiconductor wafer.
As the result of joining forces within the HiTeK project to combine the advantages of silicon-based CMOS circuits from the IHP with those of indium-phosphide circuits from the FBH, the partners have successfully integrated both circuits on a semiconductor wafer.