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Dr. Christopher Harris, European business development manager at Cree, Inc., will present “Using Cree® GaN Large Signal Models in Microwave Office Simulation Tools” at the RF/Microwave PA Forum at European Microwave Week.
Agilent Technologies Inc. announced that Nitronex, a GaAs labs company and leading producer of GaN-on-silicon RF power devices, has selected Agilent to provide a complete GaN design flow that spans both device modeling and circuit simulation. The flow uses Agilent EEsof EDA’s IC-CAP model extraction software and Advanced Design System (ADS) circuit and system simulator—both market-leading platforms in RF and microwave design.
Mentor Graphics announced the new release of its HyperLynx® product featuring advanced 3D channel and trace modeling, improved DDR signoff verification, and accelerated simulation performance.
With IC-CAP 2013.01, Agilent introduces major improvements to its flagship product for high-frequency device modeling. One key improvement is turnkey extraction of the Angelov-GaN model, the industry standard compact device model for GaN semiconductor devices.
Mentor Graphics announced the new release of its HyperLynx® product featuring advanced 3D channel and trace modeling, improved DDR signoff verification, and accelerated simulation performance.
With IC-CAP 2013.01, Agilent introduces major improvements to its flagship product for high-frequency device modeling. One key improvement is turnkey extraction of the Angelov-GaN model, the industry standard compact device model for GaN semiconductor devices.