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Altum RF announced three new GaAs pHEMT MMIC amplifiers targeting applications covering Q-, V- and E-Bands. Using WIN Semiconductors’ next-generation PP10-20 GaAs pHEMT technology, these compact die amplifiers achieve high gain and low noise.
The MwT-PH8F AlGaAs/InGaAs pHEMT delivers 30 dBm Psat at 12 GHz and is ideally suited to applications requiring high-gain and medium linear power up to 18 GHz.
MicroWave Technology Inc, (MwT), announced three families of advanced 0.25 μm AlGaAs/InGaAs based discrete devices for wide range military microwave and commercial wireless applications.