Items Tagged with 'gan-on-sic'

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, will highlight its latest industry-leading RF and microwave devices and foundry services at this year’s IEEE International Microwave Symposium (IMS2016), scheduled for May 22–27, 2016 in San Francisco, Calif.. The company is also supporting the IMS 2016 STEM program, and several onsite student design competitions.

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11–13, 2016 in Clearwater Beach, Fla.

Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems.

Wolfspeed, A Cree Company, announced that as of the end of 2015, it shipped GaN-on-SiC RF power transistors with a combined RF output power of more than 1.3 gigawatts.

Cree is gearing up for the 2012 International Microwave Symposium with plans to showcase the latest in GaN-on-SiC technology. Several IMS panel sessions will feature Cree speakers, who will discuss everything from the emerging RF market opportunities for GaN to cellular infrastructure future markets.