Pat Hindle, MWJ Editor
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Pat Hindle is responsible for editorial content, article review and special industry reporting for Microwave Journal magazine and its web site in addition to social media and special digital projects. Prior to joining the Journal, Mr. Hindle held various technical and marketing positions throughout New England, including Marketing Communications Manager at M/A-COM (Tyco Electronics), Product/QA Manager at Alpha Industries (Skyworks), Program Manager at Raytheon and Project Manager/Quality Engineer at MIT. Mr. Hindle graduated from Northeastern University - Graduate School of Business Administration and holds a BS degree from Cornell University in Materials Science Engineering.

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Military Spending and GaN Driving RF Power Markets

January 26, 2011

Patrick Hindle

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Although spending on RF power semiconductors in wireless infrastructure markets has continued to stagnate, according to ABI Research other markets – notably the military – are seeing increased activity. Also, according to a new study from ABI Research, Gallium Nitride – long seen as a promising new “material of choice” for RF power semiconductors – is continuing to gain some market traction. Gallium Nitride (GaN) increased its market share in 2010, and is expected to do the same in 2011. Although its adoption hasn’t been as rapid as originally expected, it is nonetheless forecast to be a significant force by 2016.

Other than wireless infrastructure, the vertical market showing the strongest uptick in the RF power semiconductor business has been the military. While the producers of these devices are located in the major industrialized countries, the military market is now so global that equipment buyers may come from anywhere.