Demonstration of a design method for Q- and V-band low noise amplifiers based on a distributed pHEMT model and exact simulation
Technical Feature Q- and V-band MMIC Low Noise Amplifiers This article describes MMIC low noise amplifiers for millimeter-wave applications using 0.15 µ m pHEMT technology. The design emphasis is on the active device model. The deficiency of conventional device models is identified. A distributed device model has been adapted...
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