Introduction to a new model of multi-finger heterojunction bipolar transistors used to analyze and predict current collapse, bias dependence and output power
Technical Feature Simulating Multi-finger Power HBTs A new model of multi-finger heterojunction bipolar transistors (HBT) is presented to analyze and predict current collapse, bias dependence and output power. The simulation of multi-finger HBTs has proven to be very challenging in both computer-aided design and electromagnetic (EM) simulation. However, by...
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