G. Hau, T.B. Nishimura, and N. Iwata

Characterization of a Double-doped Power HJFET for W-CDMA Cellular Handset Application Demands on next-generation wideband CDMA (W-CDMA) handset transmitters (and thus power devices) include high linearity and high power-added efficiency (PAE) under low voltage supply. A power heterojunction FET (HJFET) has been developed for such applications, achieving a high...