K.W. Kobayashi A.K. Oki, A. Gutierrez-Aitken. J. Cowles, L.T. Tran, T.R. Block and D.C. Streit

InP-based HBT Technology for Next-generation Lightwave Communications InAlAs/InGaAs-InP heterojunction bipolar transistor (HBT) technology offers high device speed, low 1/f flicker noise and monolithic integration of 1.55 mm InGaAs photodetectors making them well suited for next-generation, high data rate optoelectronic communication links. Application toward next-generation > 40 Gbps communication systems...