A comparison of the IV characteristics of GaAs MESFET devices acquired under a variety of pulsed conditions
Behavior of GaAs FET Pulsed IV Characteristics The IV characteristics of GaAs MESFET devices acquired under a variety of pulsed conditions are compared. The results show that the differences between the static and pulsed characteristics are not due to thermal effects alone as is sometimes assumed. J. Rodriguez-Tellez University...
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