Two new laterally diffused metal-oxide semiconductor (LDMOS) FETs developed for code-division/time-division multiple access applications from 1.8 to 2 GHz
60 and 120 W, 2 GHz LDMOS FETs Ericsson Components, RF Power Products Morgan Hill, CA The dramatic increase in cellular traffic has necessitated the use of spread spectrum techniques such as time-division multiple access (TDMA) and code-division multiple access (CDMA). These modulation methods have significantly tightened the linearity...
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