Articles by Wolfspeed

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, will highlight its latest industry-leading RF and microwave devices and foundry services at this year’s IEEE International Microwave Symposium (IMS2016), scheduled for May 22–27, 2016 in San Francisco, Calif.. The company is also supporting the IMS 2016 STEM program, and several onsite student design competitions.

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11–13, 2016 in Clearwater Beach, Fla.

Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems.

Wolfspeed, A Cree Company, announced that as of the end of 2015, it shipped GaN-on-SiC RF power transistors with a combined RF output power of more than 1.3 gigawatts.

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMT) and monolithic microwave integrated circuits (MMIC) with best-in-class reliability, is exhibiting and presenting at the 2016 Government Microcircuit Applications and Critical Technology Conference (GOMACTech), the premier annual event dedicated to government-funded micro- and nano-electronic research. 

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting at DMC 2015, which will take place November 30 – December 3 in Phoenix, Ariz.

Wolfspeed, a Cree Company, has partnered with Lockheed Martin to provide GaN high power amplifiers (HPAs) for the U.S. Air Force’s Space Fence, which will significantly improve the timeliness with which operators can detect space events that could potentially threaten GPS satellites or the International Space Station.

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two new plastic-packaged 50V/60W GaN HEMT devices that provide the intrinsic GaN value of power and bandwidth in a low cost package platform. Supplied in miniature (4.5mm x 6.5mm), economical, plastic SMT packages, these new devices are ideal for LTE, small cell base transceiver station (BTS), radar, public safety radio, and other communications applications. 

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting, chairing the Analog, RF, and Microwave subcommittee, and celebrating the 15th anniversary of the first GaN MMIC at the 2015 IEEE Compound Semiconductor IC Symposium (CSICS), which will take place October 11–14, 2015 in New Orleans.

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at European Microwave Week (EuMW) 2015, which will take place September 6–11, 2015 in Paris.