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GaN provides higher power density efficiency than traditional silicon in applications requiring high-frequency operation. GaN RF HEMTs are finding applications across all RF market segments rather than just cellular base stations and military radars. In order to maximize these benefits, designers must understand the thermal environment and its limitations.
Higher thermal conductivity and breakdown voltage makes GaN MMICs a key ingredient in the most critical aerospace, military, and satellite designs. However, while GaN on SiC RF technology is achieving widespread adoption in military and aerospace systems, reliability is a crucial requirement along with performance and affordability.
Higher thermal conductivity and breakdown voltage makes GaN MMICs a key ingredient in the most critical aerospace, military, and satellite designs. However, while GaN on SiC RF technology is achieving widespread adoption in military and aerospace systems, reliability is a crucial requirement along with performance and affordability.
This article will provide a top-level view of Wolfspeed's large-signal models for GaN power transistors and their application in an RF design. The article will include an overview of Wolfspeed's GaN on SiC devices, the associated large-signal models, and their advantages versus real-world devices during the development process. The piece will continue with an overview of a typical design procedure and a case study, then conclude with a discussion of the resources available to designers and how to get started.
Wolfspeed extended its family of 50 V unmatched GaN HEMT RF power transistors by adding a 250 W device with a frequency range up to 3 GHz and the highest efficiency of any comparably-rated GaN device available.
Unable to meet market demand for SiC power devices, Cree
is doubling Wolfspeed's capacity for producing SiC wafers, diodes and MOSFETs. Cree also released the latest quarterly financial results for the business.
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, will release the highest power 50V GaN HEMT demonstrated to date — its 900W CGHV14800 GaN HEMT for L-Band radar applications — to market at European Microwave Week 2016, which will take place in London, October 3–7.
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, announces their complete lineup of high efficiency, high gain, and wide bandwidth C-Band radar parts with the market introduction of the new CGHV59070 GaN HEMT for C-Band radar systems.
Wolfspeed, A Cree Company
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, announces their complete lineup of high efficiency, high gain, and wide bandwidth C-Band radar parts with the market introduction of the new