RFMW

The QPD2018D is designed using Qorvo’s proven standard 0.25 μm power pHEMT production process.

The REMC08G11GE delivers up to 55 dBm of saturated power output over a range of 8 to 11 GHz with 56 dB of gain.

The San-tron portfolio is comprised of field replaceable connectors capable of accepting 0.009”, 0.012” and 0.020” diameter launch pins with 1/2” square, 3/8” square or .625” two-hole flange configurations.

The CMD328 covers 6 to 18 GHz with over 27 dB of gain and 1.25 dB noise figure. 

The ART150FEU, LDMOS power transistor provides 150 W of pulsed or CW RF energy for ISM applications ranging from 1 to 650 MHz. 

The F6513S is an 8-channel, transmit, active beamforming, RFIC designed for application in Ku-Band planar phased array antennas for communications or radar applications.

The QPA1003D operates from 1 to 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30 percent and large-signal gain of 25 dB. 

The MB1.08.0G404828 incorporates advanced, state-of-the-art, GaN on SiC technology to deliver 10 W of saturated power from 1.0 to 8.0 GHz with a P1dB of 4 W. 

The CLF3H0035-100U is a 100 W, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 3.5 GHz.

The Qorvo QPF4288A features +22 dBm MCS11 HE40 -43 dB dynamic EVM and +27 dBm MC20 VHT20 spectral mask compliance for wireless access points.