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Lin-Sheng Liu, University of Electronic Science and Technology of China, Chengdu, China

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A HEMT Large-signal Model with Improved Transconductance and Gate Capacitance Peaking Characteristics

In this article, an improved large-signal device model of HEMTs is presented, amenable for use in commercial nonlinear simulators. The proposed model includes independent modeling equations to control the peaking and compression behaviors of the HEMT t...

May 12, 2011

Lin-Sheng Liu, University of Electronic Science and Technology of China, Chengdu, China

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The availability of general-purpose harmonic-balance and Volterra-Series simulators has generated a need for accurate nonlinear models of III-V field effect transistors (FET). 1 Due to the heterostructure complexity of HEMTs and the associated physical characteristics, they are most appropriately modeled based on a semi-empirical approach with parameters extracted from...