M. Kameche, and N.V. Drozdovski; National Centre of Space Techniques and ETEC

GaAs-, InP- and GaN HEMT-based Microwave Control Devices: What is Best and Why

The properties of a single-pole, single-throw (SPST) switch using various technologies (InP-, GaAs- and GaN-based HEMTs) are reviewed and discussed in the context of their suitability for microwave and RF control applications. Insertion loss, isolation...

May 14, 2005

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Solid-state switches based on high electron mobility transistors (HEMT) can be fabricated with a variety of different semiconductor technologies, usually selected on the basis of performance requirements. Such solid-state switches have been used successfully as control devices for transmitter and receiver switching functions in various digital communications systems. In...

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