Cree Inc., Research Triangle Park, NC

Cree is gearing up for the 2012 International Microwave Symposium with plans to showcase the latest in GaN-on-SiC technology. Several IMS panel sessions will feature Cree speakers, who will discuss everything from the emerging RF market opportunities for GaN to cellular infrastructure future markets.

Cree Inc. , a market leader in silicon carbide (SiC) power devices, continues its mission of advancing the adoption of SiC into mainstream power applications. Cree's advances in SiC technology are setting new standards in energy efficiency while reducing system costs and improving reliability when compared to silicon-based power...

Cree Inc. (Booth 1925) will demonstrate the industry's first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications at IMS 2011 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers. "This is the first GaN MMIC...

Cree Inc. announced the availability of a commercial 1200 V surface-mount SiC Schottky diode. Packaged in an industry-standard surface-mount TO-252 D-Pak, the Schottky diodes deliver the same proven performance as Cree's TO-220 through-hole devices, with a smaller board footprint and lower profile. This can enable the design of smaller,...

Cree Inc. announced that it has achieved a major breakthrough in the development and wide scale commercialization of silicon carbide (SiC) technology with the demonstration of high quality, 150-mm SiC substrates with micropipe densities of less than 10/cm2. The current Cree standard for SiC substrates is 100-mm diameter material....

Cree Inc. announced the release of a new GaN HEMT MMIC power amplifier, the CMPA0060025F, which offers 25 W output power over an instantaneous bandwidth of 20 MHz to 6 GHz. This product is ideal for military and ISM (industrial, scientific and medical) applications that require high power and...