Articles by NXP Semiconductors, Chandler, Ariz.

NXP Semiconductors N.V. has announced the DAC1627D – a 16-bit dual-channel LVDS DDR interface digital-to-analog converter (DAC) that supports output update rates of up to 1.25 Gsps. In terms of dynamic performance specifications, this new high-speed DAC is claimed to offer best-in-class single tone SFDR performance and two-tone intermodulation...

NXP Semiconductors N.V. has announced CGVxpress™, an important extension to its high speed data converter technology portfolio and the next generation of the CGV™ high speed serial interface announced in 2009. The CGVxpress will be used in future NXP ADC and DAC product families. CGVxpress (Convertisseur Grande Vitesse or...

NXP Semiconductors has inaugurated the Automotive Centre of Excellence (ACE) in Pune, India, in association with the International Institute of Information Technology (I2IT). Located at I2IT Pune Campus, this Center of Excellence will provide unique infrastructure and collaboration of the Industry and academia. The center will foster the innovation...

Two major announcements from NXP Semiconductors underscore the company’s commitment to the growing automotive market in China. The initiatives see NXP establish a new China Automotive Technical Center to focus on R&D, system innovation and customer application support, and move its automotive sales and marketing headquarters to Shanghai. The...

Greg Baker One Size Fits All. Prix Fixe Menus. Assigned Seating. These rigid conditions do not work in the RF/microwave industry. When it comes to developing the highest performance, most reliable, yet cost-effective products for leading-edge applications, design engineers need and want options. Custom Tailoring. A La Carte. Special...

With prizes worth $25,000 on offer, registration has opened for NXP Semiconductors’ first-ever High Performance RF Design Challenge , which invites RF engineers and students worldwide to submit creative application ideas for RF power devices. RF power transistors have traditionally been used in telecommunications, aerospace and broadcast infrastructure, as...

To achieve higher power levels for Laterally Diffused MOS (LDMOS) transistors, NXP has developed a 50 V process that features the highest power density for LDMOS to date and is featured in the company’s BLF57x family. The excellent power capabilities, gain, efficiency, linearity and reliability of LDMOS transistors make...

NXP Semiconductors announced the opening of a high performance radio frequency (RF) product creation center (PCC) in Billerica, MA (US). This new NXP facility, located near Boston, will focus on the design of RF and microwave integrated circuits (IC) used in demanding applications such as defense & aerospace, Industrial,...

Targeting high frequency radio applications, NXP Semiconductors announced the launch of a series of new products developed in the latest silicon-germanium (SiGe) process technology. Addressing the industry’s growing demand for more robust, cost-effective and highly integrated silicon-based technology, NXP will offer a total of more than 50 products based...

NXP Semiconductors is opening the RFID Application and System Center (ASC) in Tianjin, China. The facility will provide real-life conditions for evaluating and optimizing RFID applications and is the first of its kind in Asia. It will enable the company’s Identification business to strengthen the technical support provided to...