A 3 to 5 GHz Ultra-wideband Low Noise Amplifier Using InGaP/InGaAs Enhancement-mode PHEMT Technology
A 3 to 5 GHz ultra-wideband (UWB) resistive shunt-feedback low noise amplifier (LNA) was demonstrated by using a In0.5Ga0.5P/InGaAs enhancement-mode (E-mode) pseudomorphic high electron mobility transistor (PHEMT) for the first time. The resistive shun...
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