Andrew Edwards, Bernard Geller and Isik C. Kizilyalli, Nitronex Corp.

Extracting a Nonlinear Electro-thermal Model for a GaN HFET

This article describes the procedure used to extract a nonlinear model for a gallium nitride (GaN) power HFET. The source device is a 2 mm gate-width GaN-on-silicon HFET produced by Nitronex Corp., although the procedure can be applied to many other ty...

February 19, 2008

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The development of GaN technology has brought with it the need for accurate nonlinear active device models that can be easily used in standard design tools. A GaN HEMT model should ideally be scalable with gate width and should be able to predict the performance of the device over...

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