A. Edwards, C. Park, S. Singhal, Q. Martin, K.J. Linthicum and I.C. Kizilyalli, Nitronex Corp.

Articles by A. Edwards, C. Park, S. Singhal, Q. Martin, K.J. Linthicum and I.C. Kizilyalli, Nitronex Corp.

An Improved Thermal Design for
III-N HEMTs on Silicon Substrates

Thermal design is a primary concern for enabling electronic devices to reach their potential to operate at high power densities. Heat must be removed efficiently in order to keep the channel temperature below a desired limit. Elevated operating tempera...

October 19, 2007

A. Edwards, C. Park, S. Singhal, Q. Martin, K.J. Linthicum and I.C. Kizilyalli, Nitronex Corp.

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The power density of large periphery III-N HEMTs can be as high as 5 W/mm, 1–3 much greater than GaAs (1 W/mm) and Si LDMOS (0.8 W/mm). These devices can generate more power per unit area of chip, or equivalent power in a much smaller package. All power that...