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NXP Semiconductors announced the RF Circuit Collection, which gives engineers online access to more than 400 RF power reference circuits and documentation.
NXP Semiconductors has announced a portfolio of LDMOS RF power amplifier (PA) multi-chip modules (MCM) for 5G massive MIMO (mMIMO) base stations. The MCMs are available from NXP distributors and online partners.
BAE Systems has completed the first phase of a program to transfer short-gate GaN MMIC technology developed by the U.S. Air Force to its Advanced Microwave Products (AMP) center in Nashua, New Hampshire; the effort now moves to the second phase.
The Singapore-MIT Alliance for Research and Technology (SMART), MIT's research enterprise in Singapore, has announced the development of a commercially viable way to manufacture silicon ICs with high performance III-V devices inserted in the design.
Ampleon is launching the first two products in a new line of 12 V LDMOS transistors, targeting commercial, public safety and defense mobile radio applications.
At its annual Global Technology Conference, GLOBALFOUNDRIES (GF) announced that more than 20 clients, representing >$1 billion in design win revenue, are working with GF’s enhanced 45RFSOI platform for 5G/mmWave mobile and wireless infrastructure applications.
NXP Semiconductors N.V. officially announced its secure fine ranging chipset, SR100T–designed to bring remarkably precise positioning performance tailored for next-generation UWB-enabled mobile devices.
Cree's previously announced $1 billion SiC and GaN wafer fab will be built in upstate New York, not North Carolina, after New York offered $500 million in incentives.
Lockheed Martin has selected a Qorvo S-Band GaN on SiC power amplifier (PA) for the transmitter of the U.S. Army’s AN/TPQ-53 radar. The GaN PA replaces the first-generation GaAs MMIC, delivering more than twice the saturated output power with a 15 point improvement in power-added efficiency.
Fabless MMIC start-up Altum RF has expanded its office in Sydney, adding an RF test lab with full ESD safeguards and able to characterize devices to 65 GHz.
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