RFIC Channel - Semiconductor, MMIC & RFIC Articles, Product Launches, and more

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 Peregrine Semiconductor Corp. introduces the UltraCMOS® PE42424 high-isolation, SPDT switch optimized for 802.11ac carrier and enterprise Wi-Fi access points.  

 TowerJazz, the global specialty foundry leader, announced that it has qualified Migdal HaEmek (Fab 2) capacity for RF SOI switch and bulk CMOS controller process platforms to augment its existing factory in Newport Beach, Calif. and support the growing demand for RF front-end modules.  

 M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. 

Murata Electronics North America, Inc. and Peregrine Semiconductor Corp. announced that they have entered into a definitive agreement under which Murata will acquire all outstanding shares of Peregrine not owned by Murata, for $12.50 per share in cash, or a total transaction value of $471 million. 

 Agile Microwave Technology Inc., a product innovator in RF and Microwave component and sub-system market is pleased to announce the first of a series of Broadband Power amplifiers with >50W P1 dB minimum power over the full frequency range.  

 Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the addition of the CMD216, a new 14 to18 GHz GaN power amplifier in die form, to their expanding product line. 

 RFMW, Ltd. announces design and sales support for the RFFM6903, a 1W transmit power Front End Module (FEM) for applications in the frequency range of 868 to 960 MHz. 

 Richardson RFPD Inc. announced the availability and full design support capabilities for a new wideband, 6-bit digital attenuator from M/A-COM Technology Solutions. 

 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 

 RFMW, Ltd. announces design and sales support for a pair of GaN low noise amplifiers targeted at military and commercial radar applications as well as SatCom, point-to-point radio and WiMax applications.