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Arralis, the world leading W band device manufacturer, has added a number of new MMIC devices to its extensive product range. The new power amplifier, image cancellation mixer and variable attenuator come in response to new advance system requirements.
Based on their 0.15 µm GaN on SiC process (QGaN15), Qorvo has released a family of GaN transistors in die form, with performance to 25 GHz for advanced applications in communications, radar and defense RF systems.
Ampleon announced a 1900 W LDMOS power transistor for applications in the 10 to 500 MHz frequency range. Delivering 1900 W pulsed or 1700 W CW output power, the device is capable of operating with a VSWR up to 65:1.
The U.S. Missile Defense Agency awarded Raytheon Co. a contract modification to develop “a transition to production process” to incorporate GaN into existing and future AN/TPY-2 radars.
The inaugural EDI CON USA conference and exhibition took place on September 20-22, 2016 at the Hynes Convention Center in Boston, Mass. Nearly 1500 attendees took advantage of the opportunity to meet one-on-one with more than 140 exhibitors from the RF, microwave and high-speed digital industries. Here is a complete review of the event.
Airbus Defence and Space is continuing to future-proof its site at Friedrichshafen, Germany, with the construction of a new Integrated Technology Centre (ITC).
Mitsubishi Electric Corporation is expanding its line of GaN HEMTs to add devices with 70 and 100 W output power at Ku-Band, developed for satellite earth stations. Samples will be available beginning October 1, with full availability by January 1, 2017.
San-tron, a designer and manufacturer of RF coaxial connectors and cable assemblies, will be discussing their latest innovations at European Microwave Week in London, UK October 3-7 at Stand #67.
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Arralis, the world leading W band device manufacturer, has added a number of new MMIC devices to its extensive product range. The new power amplifier, image cancellation mixer and variable attenuator come in response to new advance system requirements.
Ampleon announced a 1900 W LDMOS power transistor for applications in the 10 to 500 MHz frequency range. Delivering 1900 W pulsed or 1700 W CW output power, the device is capable of operating with a VSWR up to 65:1.
The inaugural EDI CON USA conference and exhibition took place on September 20-22, 2016 at the Hynes Convention Center in Boston, Mass. Nearly 1500 attendees took advantage of the opportunity to meet one-on-one with more than 140 exhibitors from the RF, microwave and high-speed digital industries. Here is a complete review of the event.
San-tron