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A comparison of common solid-state power amplifier (SSPA) linearization methods, which offer significant benefit when used with both bopolar and Si/GaAs FET power amplifiers
An overview of GSM base station power amplifier module linearity as well as information on specifying the module's linearity and measuring linearity parameters
The physical realiztion of a newly designed compact microstrip coupler and the design and performance of a MMIC BPSK and vector modulator that utilizes the coupler
Miniaturized Low Cost 30 GHz Monolithic Balanced BPSK and Vector Modulators: Part II Part one of this two-article series analyzed single-stage and balanced topologies in detail. It was illustrated that a common technique for realizing direct biphase-shift keying (BPSK) microwave modulators is to employ reflection-type topology with cold pseudomorphic...
Technical Feature Design and Implementation of an L-band PLL Frequency Synthesizer Jwo-Shiun Sun, Kwong-Kau Tiong and Jiann-Hwang Liu Please click here to view the pdf file of the Technical Feature...
COMPONENTS Ultra-broadband Eight-way Power Divider The model ADC-PD-0218 ultra-broadband power divider covers the 2 to 18 GHz frequency range and features good phase and amplitude balance across all eight output ports. Standard units operate over the full -54° to 85°C temperature range with good port-to-port tracking of +/-0.7 dB...
ANTENNAS 13 - 38 GHz Low Profile Antennas The ValuLine® series low profile antennas has been expanded to include antennas operating at 13 to 38 GHz for use in cellular, PCS and Private User Networks. The units can also be customized for direct integration with OEM radio systems. The...
AMPLIFIERS High Power Amplifiers These high power amplifiers are designed specifically for communications applications at 24, 18 and 38 GHz. The MMIC-based units are available in production quantities and are field proven. Specifications include frequency ranges of 24.5 to 26.5 GHz, 27.5 to 28.5 GHz, 28.5 to 29.5...
DEVICES 30 W Power GaAs MESFET The model NEZ3436-30E S-band GaAs MESFET offers high output power of 30 W, low distortion of -45 dBc, high power-added efficiency of 37 percent and high linear gain of 10 dB. The unit operates from 3.4 to 3.6 GHz for use in high...
INTEGRATED CIRCUITS 1.2 GHz/550 MHz Dual Fractional-N PLL IC The model PE3292 phase-locked loop (PLL) IC (part of the company's FlexiPower series) designed for frequency synthesis is fabricated in the company's patented UTSi® CMOS process. Each PLL includes a FlexiPower prescaler, phase detector, charge pump and onboard fractional spur...