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Anritsu Co. introduced several new products at IMS 2009 including the MA24108A/MA24118A microwave USB power sensors that provide accurate average power measurements from 10 MHz to 18 GHz over 60 dB of dynamic range. Employing a “dual path” architecture to achieve True-RMS measurement similar to a thermal sensor over...

As we referred to "Please Come to Boston in the Springtime" as our pre-show theme song, we are making "Rock Lobster" by the B-52s our post-show theme song. IMS2009 probably faced some of the biggest challenges in its history--a big economic downturn and the swine flu virus, for example--but...

Voltage-controlled Oscillator The RP-148258-01 model is designed to meet the stringent performance requirements of the aerospace industry. This model is compliant with MIL-PRF-38534 specification essential to high reliability, military and space applications. The operating frequency range is 1420 to 2500 MHz with an operating temperature range of -40° to...

Right Angle Adapters The UG-27 C/U is a right angle adapter that features solderless construction. The solder-free construction offers dependability equal to a straight plug while achieving 90° bends. The solder-free adapters also address RoHS compliancy issues by reducing lead content. The 50 ohm UG-27 C/Us perform efficiently up...

Material RFID Tag MetalTag™ Impact is a Read-on-Metal EPC Gen 2 RFID tag. MetalTag Impact is constructed of a ruggedized outer coating, using a patented elastomer with a robust exoskeleton. The tag is ideal for challenging environmental conditions, such as severe weather, wide temperature variations, direct and prolonged UV...

MWJ: What are the most significant benefits of GaN/LDMOS/HVFET? How does this compare to other high power devices?   RFMD: GaN based amplifiers provide the following significant benefits 1)       Higher efficiency for pulsed, CW saturated and linear applications which improve thermal requirements and energy usage.   GaN is...

  MWJ:   What are the most significant benefits of GaN/LDMOS/HVFET? How does this compare to other high power devices?   Nitronex: The most significant advantages of GaN over other power technologies are is its power density and high frequency response. Having several times higher power density results in...

MWJ: What are the most significant benefits of LDMOS?   Freescale: • LDMOS has the lowest cost per watt ($/W) ratio of any of the high power RF amplifier technologies. • LDMOS has some of the best Class-AB linearity, gain, reliability, and thermal resistance numbers of any of the popular RF power...

MWJ:   What are the most significant benefits of HVVFET™? How does this compare to other high power devices? HVVi: The benefit of designing high power devices using a high voltage breakdown technology and a vertical device structure is high power density. The resulting power device is housed in...

MWJ: What is the potential of GaN/LDMOS/HVFET technology in mobile radio communication systems. What are the most significant benefits of GaN/LDMOS/HVFET? NXP: NXP is the company that develops both LDMOS and GaN technology. LDMOS is today’s technology of choice for base station, broadcast and radar applications. Being technology leader,...