RF & Microwave Industry News

NSN and NYU WIRELESS bring first-ever 5G Summit to Brooklyn

If you had any doubts that Brooklyn was fast becoming one of the hottest locales in the tech industry, look no further than the 5G Summit, held from April 23 to 25 at the New York University Polytechnic School of Engineering. Co-organized by the NYU WIRELESS research center and Nokia Solutions and Networks (NSN), the conference, planned to be an annual event from now on, brought together industry leaders from across academia, business and government to explore the future of Fifth Generation—more commonly called 5G—wireless technology.


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Agilent Technologies introduces impedance analyzers with flexible frequency options

Test & Measurement

Agilent Technologies Inc. introduced the Agilent  E4990A and  E4991B impedance analyzers, specifically designed for R&D, quality assurance and inspection engineers characterizing and evaluating passive electronic components, semiconductor devices and materials. The analyzers provide unparalleled accuracy and the best performance in the industry with flexible frequency options, all at an affordable price.


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Integrated Microwave Technologies, LLC (IMT) briefcase receiver makes its debut at AUVSI 2014

Integrated Microwave Technologies, LLC (IMT), a business unit within the Vitec Group's videocom division, and a leader in advanced digital microwave systems for MAG (Military, Aerospace & Government) markets, highlights its new Briefcase Receiver (BCRx) at AUVSI 2014, the Association for Unmanned Vehicle Systems International's Annual North American Symposium and Exposition (Booth 1045).

 


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Cree introduces highest power and frequency plastic packaged GaN transistors

Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.


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Element Six's GaN-on-diamond wafers proven by Raytheon to provide three times improvement in power density

Element Six, a leader in synthetic diamond supermaterials and a member of the De Beers Group of Companies, announced that its Gallium Nitride (GaN)-on-Diamond wafers have been proven by Raytheon Co. to significantly outperform industry standard Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) in RF devices—reducing thermal resistance, increasing RF power density, and preserving RF functionality.


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AWR at IMS2014 in Tampa, FL – visit us in the NI/AWR booth #633

We have an exciting agenda of activities that provide insight into the powerful, innovative tools and technologies of our newly released V11 NI AWR Design Environment™, which includes Microwave Office®, Analog Office®, Visual System Simulator™ (VSS), AXIEM®, and Analyst™ for the design of MMICs, RF PCBs, microwave modules, RFICs, communication systems, radar systems, antennas, and more.

 


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