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SiGe Semiconductor Inc. announced the availability of the SE2597L power amplifier (PA) designed specifically for 2.4 GHz ISM band applications. This highly integrated silicon device is the latest PA in SiGe Semiconductor's successful line of discrete 2.4 GHz silicon power amplifiers. Offering an industry-leading combination of high performance and...

This is the first European Wireless Technology (EuWiT) Conference . It was formerly known as the European Conference on Wireless Technology (ECWT) . Co-sponsored by Eu M A and the IEEE MTT Society, EuWiT is an integral part of European Microwave Week and is a forum for the presentation...

From its conception in 1943 by Dr. Rudolf Kompfner in England, 1 and later its development by Kompfner and John R. Pierce at the Bell Laboratories in the United States, 2 the travelling wave tube (TWT) has become the microwave amplifier of choice for many commercial and military systems....

The transceiver duplexer is a key element in avionics systems, radars, antenna arrays and wireless communication systems. The duplexer provides protection of the receiver and transmitter from unwanted parasitic signals. This article discusses several duplexer schematics, their development flow and a trade-off design. Duplexer Schematics An RF transceiver duplexer...

Part I of this report last month focused on individual countries and their contributions and achievements related to the microwave industry. But the continent as a whole plays a key role in all sectors including industrial, biomedical, military, aerospace and emerging wireless technologies. Since there is such a broad...

This six-part series looks at five decades of the microwave industry recorded in Microwave Journal . In this fourth installment, we focus on the 1980s, a decade marked by such notable events as the birth of MTV, punk rock and “new wave,” the marriage of Prince Charles and Diana,...

A simple method for the extraction of the small-signal model parameters of a MOSFET is proposed. The intrinsic elements determined are described as functions of the extrinsic resistances. The parasitic elements are iteratively determined using the variance of the intrinsic elements as an optimization criterion. Good agreement is obtained...

The high power and wide bandwidth potential of GaN HEMT devices is well known. 1 RFMD has been developing high power amplifiers using GaN HEMTs for various applications. A 250 W amplifier in the 2.14 to 2.5 GHz band for wireless infrastructure applications in the WCDMA and WiMAX bands...

The advantages of anechoic chambers utilized for antenna measurements, as compared with conventional outdoor antenna test ranges, such as security, interference-free radiation and immunity to weather, are well known. Typical anechoic chambers comprise a shielded enclosure with the internal metallic surfaces covered by absorbing materials, a source antenna to...

A novel CPW-fed rectangle-trapezoid-rectangle shaped monopole antenna composed of a trapezoid and two rectangles is presented. In this context, the flat monopole structure improves the impedance bandwidth and reduces the size of the antenna dramatically. The ultra-wideband (UWB) antenna design plays a role as a filter. The coplanar waveguide...