155 GHz MMIC LNA's with 12dB Gain Fabricated Using a High Yield InP HEMT MMIC Process
A D-band InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) MMIC low noise amplifier (LNA) developed using a high performance 0.1 µm passivated InP HEMT MMIC process
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