API Technologies Corp., a leading provider of high performance RF/microwave, power, and security solutions for critical and high-reliability applications, expands its line of Gallium Nitride (GaN) based power amplifiers to include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These new pulsed, solid state power amplifiers are making their debut at the IEEE MTT-S International Microwave Symposium (IMS 2014) in Tampa, Florida.