Articles Tagged with ''power''

Qorvo Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, today announced a new family of power amplifiers (PAs) offering industry-leading efficiency for small cell base station applications. Small cell solutions add capacity to mobile networks and are a key component in improving network performance.

Freescale Semiconductor introduced its first gallium nitride (GaN) RF power transistor for cellular base stations. The new A2G22S160-01S delivers exceptional performance in 30 W and 40 W amplifiers for wireless infrastructure applications, and represents the first of what is planned to become a broad portfolio of Airfast family GaN transistors for the cellular market. 

 M/A-COM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the newNPA1006, a Gallium Nitride (GaN) wideband power amplifier optimized for 20-1000 MHz operation. This GaN on Silicon (Si) HEMT D-Mode Amplifier is suited for narrowband to broadband applications spanning test and measurement, defense communications, land mobile radio and wireless infrastructure. 

 Qorvo, Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, announced the introduction of high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers in plastic packages designed to improve the size, weight and power performance in commercial and military S-band radar applications. 

 Marki Microwave is proud to announce the release of MMIC mixers and amplifiers at the International Microwave Symposium in Phoenix. After several years of intensive development, the new GaAs Schottky MMIC mixers serve as an outstanding low cost and high performance complement to Marki's existing band ofdouble balanced Microlithic® mixers. Between these two products lines, Marki has every RF and LO frequency from 1.5 to 67 GHz covered with some type of chip scale form factor design. 

 The model MFC147 from TRAK Microwave provides 13.75 to 14.50 GHz coverage for civilian and military aviation Ku-band SATCOM applications, including In-Flight Entertainment (IFE) systems and UAV communications. The unit features a ruggedized design and innovative thermal management technique to withstand challenging airborne environments utilizing SMT construction with no open die. Input frequency to the Block Upconverter (BUC) is 950-1700 MHz, with Ku-band output of +12 to +17 dBm.  An integrated, low-noise, GaN, Solid State Power Amplifier (SSPA) provides 25 watts minimum output power providing better than -120 dBc/Hz noise power (-140 dBc/Hz typical) and <-22 dBc spectral regrowth (OQPSK). 

 The model MFC147 from TRAK Microwave provides 13.75 to 14.50 GHz coverage for civilian and military aviation Ku-band SATCOM applications, including In-Flight Entertainment (IFE) systems and UAV communications. The unit features a ruggedized design and innovative thermal management technique to withstand challenging airborne environments utilizing SMT construction with no open die. Input frequency to the Block Upconverter (BUC) is 950-1700 MHz, with Ku-band output of +12 to +17 dBm.  An integrated, low-noise, GaN, Solid State Power Amplifier (SSPA) provides 25 watts minimum output power providing better than -120 dBc/Hz noise power (-140 dBc/Hz typical) and <-22 dBc spectral regrowth (OQPSK). 

 NI Microwave Component's popular QuickSyn Lite frequency synthesizers are now extended to millimeter wave. The new synthesizer modules employ the same revolutionary phase-refining technology that all QuickSyn products use to enable fast switching speed, low phase noise, compact size, and low cost. The modules are available in three popular bands—27 to 40 GHz, 50 to 67 GHz, and 76 to 82 GHz—and are designed to supply medium power output. These new products present a very cost-effective solution for applications requiring a stable and clean CW millimeter-wave source. 

MACOM designers used NI AWR Design Environment™ software inclusive of Microwave Office circuit design software, AXIEM 3D planar EM simulator, Analyst™ 3D FEM simulator, and APLAC harmonic balance (HB) simulator to successfully design and simulate a 4 W Ka-band PA using a 2 mil thick 0.15 um GaAs pseudomorphic high-electron mobility transistor (pHEMT) process.

Freescale Semiconductor is expanding its L-band portfolio with two Airfast RF power transistors featuring exceptional system function integration and broadband high power performance.