Articles Tagged with ''amplifier''

AWR to sponsor and exhibit at EDI CON 2013

What: AWR is a gold sponsor at the Electronic Design Innovations Conference (EDI CON) 2013, which runs from March 12 -14 in Beijing, China. Together with parent company National Instruments, AWR will be showcasing at Booth #255 joint hardware/software solutions, as well as the first update in 2013 of the AWR Design Environment™, inclusive of Microwave Office®/Analog Office® circuit design software, VSS™ system design software, as well as AXIEM® 3D planar EM software and Analyst™ 3D FEM EM software.


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Custom MMIC introduces the CMD132P3 ultra-low noise amplifier

Custom MMIC, (www.CustomMMIC.com), a developer of performance-driven monolithic microwave integrated circuits (MMICs), is adding a new 5 to 11 GHz ultra-low noise amplifier to its growing line of high-quality products. The CMD132P3 presents an ultra-low noise figure of 1.3 dB, delivers greater than 20 dB of gain across the entire bandwidth, and has a corresponding output 1 dB compression point of +10 dBm.


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Linear's fully differential IF 15 dB RF/IF amplifier achieves 50 dBm OIP3

Linear Technology announces the LTC6430-15, a 15dB amplifier, which achieves high dynamic range in a 100 Ohm differential environment from 20 MHz to 1GHz and beyond. Two performance grades are available: at 240MHz, the A-grade OIP3 is typically 50 dBm and is fully tested and guaranteed to be a minimum of 47dBm. Noise Figure is 3dB, which corresponds to an input-referred amplifier noise of 1nV/√Hz.


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Richardson RFPD to sponsor GaN Panel at EDI CON 2013

Richardson RFPD Inc. announces its sponsorship of a special expert forum discussing the state-of-the-art in Gallium Nitride semiconductor technology targeting high-power RF and microwave applications. This forum will be held at EDI CON 2013 in the Beijing International Convention Center, Beijing, China, March 12-14, 2013. As the sponsor, Richardson RFPD has assembled a panel of experts from leading suppliers of discrete transistors and integrated circuits based on GaN technology.


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