Articles Tagged with ''insertion''

MACOM announced a new integrated SPDT switch and low noise amplifier (LNA), with bypass mode, for WLAN 802.11a,n,ac network applications.

GaN power amplifiers are driving demand for increased power handling from supporting passive components, and Marki Microwave is responding with new high power bias tees and baluns. The new high power surface mount baluns (BALH-0003SMG and BALH-0006SMG) have a 37 dBm 1 dB compression point and improved 5 dB insertion loss (2 dB excess).

RFMW  Ltd. announces design and sales support for two new broad band, high-performance switches from Peregrine Semiconductor. Targeting the test and measurement market, the PE42520 and PE42521 SPDT switches offer performance to 13GHz at a 36dBm power rating. The resulting input IP3 (IIP3) is 66dBm while IIP2 is 115 dBm.

Richardson RFPD Inc. introduces seven new high power switches from Skyworks Solutions Inc. (Skyworks).

Peregrine Semiconductor Corp., a fabless provider of high-performance radio frequency integrated circuits (RFICs),  announced from Mobile World Congress in Barcelona the latest version of UltraCMOS® process technology — Semiconductor Technology Platform 8 (STeP8). STeP8 technology shows a 36 percent improvement in RonCoff performance over STeP5 technology announced just one year ago — dramatically improving the linearity, insertion loss, and isolation capabilities of Peregrine’s RFIC products.

M/A-COM Technology Solutions Inc., a supplier of high performance analog semiconductor solutions, announced a new broadband diplexer, specifically designed for CATV Customer Premises Equipment (CPE) applications.

Peregrine Semiconductor Corp. announced the expansion of its high-linearity, low insertion loss RF switch family with the availability of the HaRP™ technology-enhanced SPDT PE42422 RF switch.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new RF switch from Peregrine Semiconductor Corp. The PE42430 switch was developed on Peregrine's patented UltraCMOS® technology and combines low insertion loss with high linearity, high isolation, and small package size, making it well suited for WLAN and Bluetooth® applications in the 2.4 GHz band, as well as general broadband switching applications.