Articles Tagged with ''efficiency''

Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.

Cree Inc. announces that Shinry Technologies, a premier high-tech enterprise focused on energy efficient applications in transportation and lighting, employed Cree’s 1200V C2M family of SiC MOSFETs in its new, high-efficiency, hybrid electric and electric vehicle (HEV/EV) power converters to achieve industry-leading 96 percent efficiency.  According to Shinry Technologies, Cree’s C2M SiC MOSFETS also enabled a 25 percent reduction in product size and reduced peak power losses by over 60 percent compared to the traditional silicon versions.

Linear Technology Corp. announces the LT8614, a 4 A, 42 V input capable synchronous step-down switching regulator. A unique Silent Switcher™ architecture reduces EMI/EMC emissions by more than 20 dB, well below the CISPR 25 Class 5 limit. Even with switching frequencies in excess of 2 MHz, synchronous rectification delivers efficiency as high as 96% while Burst Mode® operation keeps quiescent current under 2.5 µA in no-load standby conditions.

If you are assessing the power conversion efficiency of your power amplifiers, you are probably making power-added efficiency (PAE) measurements. Most PAE test setups use multiple instruments – such as RF power meters, digital oscilloscopes and DC power analyzers – to calculate RF voltage and current measurements.

AWR Corp. gifted its software to the winners of the High Efficiency Power Amplifier (HEPA) and Software Defined Radio (SDR) Student Design Contests offered at the IMS 2013. The gifts are part of the AWR University Program, which encourages students to become involved in the dynamic profession of microwave and RF engineering and to apply their knowledge to practical designs using the highly efficient AWR design methodology.

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new MMIC power amplifier for high power broadband applications.

RFMW Ltd. announces design and sales support fora discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage.

Agilent has a new application note titled "Understand the Basic Principles of Vector Network Analysis" available now.

NXP Semiconductors N.V. announced the availability of its ultra-wideband Doherty reference design using the BLF884P and BLF884PS – the industry’s first wideband Doherty power amplifiers capable of broadband operation (470 to 806 MHz). The new 70W DVB-T LDMOS designs bring the high-efficiency gains of Doherty topologies to broadcast transmitters, using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum.

M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.