GaAs HEMT LNA Die
The HMC-ALH508 is a three-stage GaAs HEMT MMIC low noise amplifier (LNA) chip that operates between 71 and 86 GHz, replacing the HMC-ALH459. The HMC-ALH508 features 13 dB of small-signal gain, 4.5 dB of noise figure and an output power of +7 dBm at 1 dB compression. The HMC-ALH508 operates from two supply voltages at 2.1 and 2.4 V respectively, while consuming only 30 mA of supply current. All bond pads and the die backside are Ti/Au metallized and the amplifier is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications.
Hittite Microwave Corp.
Chelmsford, MA
(978) 250-3343
www.hittite.com
RS No. 217
MMIC High Power Amplifier
This GaAs MMIC high power amplifier (HPA) features +37 dBm saturated output power and 27 dB small-signal gain. This HPA, identified as XP1058-BD, uses a dual-sided bias architecture, covers 14.5 to 16 GHz, and achieves +44 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications.
Mimix Broadband Inc.
Houston, TX
(281) 988-4600
www.mimixbroadband.com
RS No. 257
Ultra-thin MOSFETs
Targeting battery-powered appliances and driver MOSFETs in DC/DC converters, the new N0100P, N0301P, N0302P and N0301N MOSFETs, in a SOT-23F package, employ a flat lead structure instead of the conventional gull wing structure. This has made it possible to decrease the package height by 0.1 mm, thus enabling designers to realize a smaller design footprint. This flat lead structure also means that the packages of the new MOSFETs are capable of carrying larger chips, yet can still provide the high current capabilities of up to 4.5 A (N0301N). A 20 percent reduction on-resistance compared to existing MOSFETs is achieved. The new devices include three P-channels and one N-channel MOSFET enabling designers to choose the best option depending on the specific system.
NEC Electronics (Europe) GmbH
Düsseldorf, Germany
+49 (0) 211 65 03 0
www.eu.necel.com
RS No. 218
Two-way Power Dividers
These ten new low cost SMD type two-way-divider/splitter/combiners are designed for LTE and WiMAX frequencies. It is now proposed to have 2.6 GHz for Europe, 1800 to 2000 MHz for China, and 700 MHz for US LTE bands. PD09C2 (700 to 960 MHz), PD18C2 (1.7 to 1.9 GHz), PD20C2 (1.9 to 2.2 GHz), PD23C2 (2.2 to 2.4 GHz), and PD26C2 (2.5 to 2.7 GHz) has been released in an industry standard SOIC-8 type plastic package and is lead-free/RoHS compliant. All these devices will be available with SOT-23-6L package, which has the same footprint with SOT-6 and SOT-26. Cost advantage is increasingly becoming an important strategic advantage and this low cost divider can be the correct solution for many infrastructure telecommunication equipment manufacturers.
RFHIC Corp.
Suwon, GyeongGi-do Korea
82-31-250-5011
www.rfhic.com
RS No. 231
Integrated Configurable Components
RFMD has extended its portfolio of integrated configurable components to include products for the cellular repeater and Wireless Local Area Network (WLAN) markets. The new integrated configurable components include the RF2057 RF synthesizer with integrated mixers and the RF2059 RF transverter. RFMD's integrated configurable components deliver unmatched levels of flexibility and functional integration to designers of radio systems. By integrating multiple common RF functions into highly integrated, size-reduced packages, the integrated configurable components enable designers to develop radio systems that operate over a wide dynamic range and across a broad range of frequencies and channel bandwidths. The RF2057 and RF2059 join the RF2051, RF2052 and RF2053, which were introduced in April 2008 and have been adopted in markets as diverse as cellular, defense and broadband cable systems.
RFMD
Greensboro, NC
(336) 664-1233
www.rfmd.com
RS No. 256
PHEMT GaAs IC SP3T Switch
This pseudomorphic high electron mobility transistor (PHEMT) gallium arsenide (GaAs) integrated circuit (IC) SP3T switch is designed for 0.1 to 6 GHz. The SKY13317-373LF symmetric switch offers low insertion loss and high isolation with a 44 percent reduction in size than SKY13309-370LF. Featuring higher overall transmit efficiency and linearity, less board space is used with greater design/layout flexibility, equating to a small and thin end product. Appropriate for high volume, consumer products Ñ end users will also discover better linearity and a clearer signal. The SKY13317-373LF is currently being used with wireless local area network (WLAN) and Bluetooth® combo chipsets.
Skyworks Solutions Inc.
Woburn, MA
(781) 376-3000
www.skyworksinc.com
RS No. 219
RF Power Transistors
HVVi Semiconductor introduces the HVV1011-500, the latest in its family of extremely rugged L-band (1030 to 1090 MHz) RF power transistors aimed at IFF, TCAS and transponder/interrogator markets. This robust 50 V device achieves output power over 500 W P1dB providing 19 dB gain and 50 percent drain efficiency under the following pulse condition (50 µs P.W., 5 percent D.C.), while withstanding industry leading output load mismatch tolerance of 20:1 VSWR. The HVV1011-500 is a single-ended pulsed power transistor assembled in an HV800, two-lead, bolt-down, metal flanged package with LCP lid.
HVVi Semiconductors Inc.
Phoenix, AZ
(480) 776-3800
www.hvvi.com
RS No. 255
Components
Four-way Power Divider
Model AM-900PD1196 is a four-way power divider designed for applications such as wireless and industrial scientific and medical (ISM) that operate between 800 to 1000 MHz. The module splits an input signal into four separate outputs, and features low insertion loss and excellent amplitude and phase balance. The model AM900PD1196 operates over a frequency range of 800 to 1000 MHz, with insertion loss of 1.5 dB or less, isolation of at least 25 dB, amplitude balance of 0.3 dB or less, and phase balance of 5 deg. or less. Size: 4" x 2.15" x 1".
Anatech Microwave
Garfield, NJ
(201) 772-4242
www.anatechmicrowave.com
RS No. 220
E-band Components
The newly developed E-band (WR-12 waveguide band) component family enables the rapid development of short-haul communication links operating license-free from 71 to 86 GHz. The component family includes oscillators, multipliers, low noise and power amplifiers, sub-harmonically pumped mixers and up-converters, filters and diplexers. All products are available as separate components or combined as integrated assemblies.
Ducommun Technologies Inc.
Carson, CA
(310) 847-2859
www.ducommun.com
RS No. 221
Temperature Variable Chip Attenuator
The AN7 is a new solution for temperature compensation with an SMT planar style chip design. This new AN7 offers a small 0805 package size for TVA line and has excellent frequency response from DC to 6 GHz. The AN7 is suitable for high volume, pick & place and targeted for telecom and WiMAX applications. The AN7 variable attenuator is available in designs of 1 through 6 dB in one dB increments with temperature attenuation coefficients (TCA) of -.003 through -.009, dB/dB/deg C and an operating temperature range of -55° to +125°C. Size: 0.080" x 0.050".
EMC Technology
Stuart, FL
(772) 286-9300
www.emct.com
RS No. 222