Richardson RFPD, Inc., an Arrow Electronics company, announced a featured lineup of Ka-Band, GaN-on-SiC MMIC power amplifiers from United Monolithic Semiconductors.
Offered in die and plastic QFN packaging, the devices are available in a variety of power levels to support Ka-Band satcom uplink and 5G FR2 bands n257, n258, n259 (partial), n260 and n261.
UMS’ proprietary GH15 GaN process is optimized up to 42 GHz and delivers high power, high PAE and high linearity. It is ideal for transmitting modulated waveforms.
The featured Ka-band MMIC amplifiers include:
Part Number |
Frequency Range(GHz) |
Psat(dBm) |
Gain(dB) |
Efficiency(%) |
Drain Voltage(V) |
Package Type |
CHA6682-98F/00 |
24–27.5 |
37 |
25 |
32 |
20 |
Die |
CHA8362-99F/00 |
26.5–31 |
44 |
25 |
30 |
25 |
Die |
CHA6357-QKB/20 |
27–31 |
36 |
28 |
20 |
20 |
Plastic SMT |
CHA8262-99F/00 |
27.5–31.5 |
41 |
24 |
25 |
20 |
Die |
CHA6094-QKB/20 |
35–42.5 |
33 |
26 |
13 |
27 |
Plastic SMT |
CHA6095-QKB/20 |
35–42.5 |
36 |
25 |
12 |
27 |
Plastic SMT |
CHA7452-99F/00 |
35.5–40.5 |
39.5 |
29 |
24 |
20 |
Die |
CHA7453-99F/00 |
37.5–41.5 |
39.5 |
28 |
22 |
20 |
Die |
CHA7455-99F/00 |
39.5–42.5 |
39.5 |
32 |
24 |
20 |
Die |
Samples and evaluation boards are available from Richardson RFPD. In addition to the above-listed standard parts, customization, advanced packaging and foundry services are available.