Tabor Electronics

For over 50 years, Tabor Electronics has been involved in signal generation technology. Established in 1971, Tabor offers a range of high-end signal sources, including RF and microwave signal generators, high-speed arbitrary waveform generators/transceivers and high-voltage amplifiers.At the show, they featured the Lucid RF signal generator series and the new additions to the Proteus arbitrary waveform generators/transceivers.

The Lucid RF signal generator series is geared towards solving applications demanding high dynamic range, fast switching speed and easy remote programming for system integration, all in a compact module platform. The series was designed to offer a full product portfolio for generating signals for various applications, whether 5G, radar, communications or other applications.

Tabor’s new addition to the Proteus, arbitrary waveform generators/transceivers series has a built-in IQ modulator with advanced capabilities for multi-channel RF signal generation. The system is based on a PXIe platform and enables the user to transmit, receive and perform digital signal processing in a single instrument. The Proteus series offers an integrated numerically-controlled oscillator (NCO), digital interpolator and IQ modulator for the generation of complex RF signals directly from the Proteus instrument. The internal digital up-converter enables the direct generation of IQ modulation signals, eliminating limitations such as IQ mismatch and in-band carrier feedthrough that are present with external IQ modulators and mixers. This AWG targets multi-channel applications such as quantum physics and radar that need high performance, synchronized, phase-coherent outputs. 

Tagore Technology Inc.

At IMS, Tagore announced the introduction of the TS8728N and TS8729N asymmetrical reflective single-pole two throw (SPDT) switches designed for broadband, high-power switching applications. The new feature-rich switches offer best-in-class insertion loss, power handling, high linearity and high isolation performance and are well-suited for L- and S-Band radar and cellular infrastructure applications. The TS8728N is designed to operate at 400 W of pulse power with 2 ms pulse width and 20 percent duty cycle in S band whereas TS8729N is designed to operate at 550 W of pulse power with 2 ms pulse width and 20 percent duty cycle. Th devices operate with a single +5 V supply and switch with a single control voltage (0 to 3 V). They can be tuned to specific RF bands within the range of 0.3 to 5.0 GHz by modifying select external SMT components.

These new devices are compact, integrated high-power single-pole, double-throw (SPDT) with on board driver circuits. TS8729N can cover 500 MHz to 2.0 GHz and provide very high RF power handling & high linearity within a small package size. The TS8728N covers 0.5 to 5.0 GHz and has been optimized for switching speed.

Teledyne e2v

Teledyne displayed the EV10AS940, a 10-bit Ka-band capable single channel analog-to-digital converter allows a sampling rate up to 12.8 GSPS at IMS. It features digital down-conversion and frequency hopping capabilities with multiple digital channels thanks to the integration of multiple NCOs. The EV10AS940 is packaged with an organic substrate to allow high speed and high bandwidth operations. 

They also released the TDLNA0840SEP which is a UHF wideband low power LNA MMIC. The MMIC provides a nominal gain of 29 dB and a NF of 1.5 dB across the operating frequency range, with a power consumption of 25 mW. The RF ports are dc blocked, and matched to 50 ohms nominal. The TDLNA0840SEP will be available packaged in a 3 x 3 mm, 16-pin, plastic QFN. Typical application environments include terrestrial military, avionics, and space applications. Typical use being in phased antenna arrays for communication systems.

Tektronix 

At booth 2205, Tektronix showcased demonstrations of several cutting-edge technologies. This included viewing the complex environments created in the Tektronix Arbitrary Waveform Generator and using SignalVu-PC with the Tektronix 6 Series B oscilloscope, which delivers the functionality of a vector signal analyzer.

Times Microwave

On display, Times Microwave Systems' had their high power product lineup. Their StripFlex®, HPL, HP and HPQD™/MPQD™ connectors redefine connectivity, offering unmatched performance and durability for any application. StripFlex® provides exceptional flexibility without compromising performance, while HPL ensures reliability and efficiency in power distribution systems. HP connectors deliver robust connections for high-power applications, and HPQD/MPQD connectors offer quick-disconnect functionality and versatility.

The also featured their SiO2 cables for harsh environments. The SiO2 semi-rigid cable assemblies are used in applications demanding the ultimate in phase tracking performance and extreme environments. These cables are well suited for demanding applications such as space or quantum computing and available in several frequency ranges.

TransEON Inc.

TransEON unveiled a new MOSFET-based GaN-on-SiC process at IMS2024. The new process enables fabrication of cutting-edge transistors and MMICs with significant benefits over existing GaN HEMT technology. An official launch event took place at the Marriott Marquis Independence Salon D on Tuesday June 18, directly accessible from the Walter E. Washington Convention Center Concourse (Level C).  Staff wasalso be present at Booth 2343 on the trade show floor.

Transline Technology

Transline Technology showcased its unique proficiency in manufacturing metal-backed PCBs at IMS. These type of PCBs offer superior thermal performance and reliability, which cater to the evolving demands of high frequency applications in industries such as telecommunications, aerospace, defense, and beyond. Attendees who visited booth #733 had the opportunity to engage with Transline's team of experts, who provide insights into the company's capabilities and discuss how their metal-backed PCBs can address specific project requirements.

United Monolithic Semiconductors (UMS)

With major locations in France and Germany, our company addresses defense, space, satcom and telecommunications applications. UMS offers ASIC or catalog products based on its internal III-V technologies. Catalog products cover DC to 100 GHz, using GaAs, GaN and SiGe technologies, including power amplifiers, mixed-signal functions, low noise amplifiers, and transceiver systems. They are certified ISO 9001, ISO 14001 and IATF 16949 and the majority of its III-V internal technologies are approved for space use and part of the ESA EPPL list.

In particluar, UMS was showcasing the CHA8362-99F 27.5 to 31 GHz 25W GaN monolithic bare die HPA and the CHA6682-99F 24 to 27.5 GHz 5W  GaN monolithic bare die PA.

Virginia Diodes Inc.

VDI manufactures state-of-the-art test and measurement equipment for mm-wave and THz applications. These products include Vector Network Analyzers, Spectrum Analyzers and Signal Generator Extension Modules that extend the capability of high-performance microwave measurement tools to higher frequencies. VDI's component products include detectors, mixers, frequency multipliers and custom systems for reliable operation at frequencies between 50 GHz and 2 THz. All VDI components include in-house fabricated GaAs Schottky diodes and microelectronic filter structures.

VDI was showing some of its latest product offerings .Their mini VNA extension module is 1/4 the volume of previous versions. Generally, VDI does VNA Extenders deliver that allow for high performance network analyzer frequency extension into the THz range. Models cover 26 GHz to 1100GHz with additional bands in development. In addition to the full list of  TxRx modules, VDI also offers TxRef modules and Rx modules that deliver optimized performance for specific applications. These modules combine high test port power and exceptional dynamic range. They are compatible with most network analyzers and can be integrated into probe stations and antenna chambers. Power leveling and sweeping is also supported.  

WAVEPIA 

WAVEPIA was in booth #851, where they showcased a range of new products, including GaN MMIC PA, FEM and LNA solutions from low to Ka-Band. 

WIN Semiconductors

WIN Semiconductors showcased its compound semiconductor RF and mmWave solutions in booth 531 at IMS. WIN recently expanded its portfolio of RF GaN technologies with the beta release of a highly robust mmWave GaN on SiC technology, NP12-0B.Core to this platform is a 0.12 μm gate RF GaN HEMT technology incorporating multiple refinements to enhance DC and RF ruggedness and add die-level moisture resistance. NP12-0B integrates multiple transistor improvements providing high ruggedness when operated in deep – saturation/high-compression pulsed and CW conditions. This new rugged technology eliminates the pulse droop behavior observed in GaN HEMT power amplifiers thereby improving the range and sensitivity of pulsed-mode radar systems. Additionally, NP12 – 0B is available with the Enhanced Moisture Ruggedness option and provides excellent humidity resistance when used in plastic packages.

WIN Semiconductors also announced the beta release of a moisture rugged 0.1 µm pHEMT technology, PP10-29. Building on the mature and production proven PP10 platform, this high-performance technology incorporates WIN’s second-generation humidity resistance process, EMRII, to provide mechanical protection and moisture ruggedness at the wafer-level. To minimize added parasitic capacitance, the EMRII layers form localized air-cavities over all transistors to provide moisture resistance with minimal impact to gain, noise figure and output power. This key feature of PP10-29 mitigates amplifier performance changes from packaging, plastic encapsulation or PCB embedding, and accelerates new product development.