A new surface-mount technology (SMT)-packaged power amplifier has been introduced for wireless communications applications, including millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), satellite communications (SATCOM) and very small aperture terminal (VSAT) use.

The model XP1000P1 GaAs MMIC surface-mount power amplifier is a two-stage amplifier optimized for linear output operation over the 17 to 24 GHz frequency range that features an output third-order intercept point of +36 dBm and a small-signal gain of 18 dB.

Using a 0.15 mm gate length GaAs pseudomorphic high electron mobility transistor (PHEMT) device model technology, the chip has been specifically designed to provide excellent linearity for applications utilizing high index modulation schemes. Figure 1 shows the XP1000P1 device's typical gain vs. frequency.

The device is supplied in a surface-mount leadless chip carrier compatible with high volume SMT processing and includes an on-chip temperature-compensated output power detector and excellent input/output return loss. Figure 2 shows the amplifier's return loss vs. frequency.

The device's recommended supply voltage is +5.5 V DC and supply current is 430 mA. Maximum gate bias is +0.3 V DC and maximum input power is +9.0 dBm.

Operating temperature is -55° to +75°C and storage temperature is -65° to +165°C. Table 1 lists the XP1000P1 amplifier's electrical characteristics at an ambient temperature of 25°C.

The XP1000P1 device has a broadband response that closely matches die performance with good thermal conductivity, providing a reliable SMT power amplifier. The SMT package permits assembly using standard SMT processes with no specialized die attach or wire bonding requirements, thus leading to a more rugged assembly for tuning and testing.