RFHIC released their latest 200 W, S-Band GaN transmitter/receiver (T/R) module designed for radar systems applications. Operating from 2.7 to 3.1 GHz, the RFMR29-SFEM-200-400A achieves 200 W of output power with a TX gain of 59 dB. The RFMR29-SFEM-200-400A is designed using our GaN on SiC HEMT technology, resulting in higher breakdown voltage, wider bandwidth and higher efficiency. The RFMR29-SFEM-200-400A achieves a duty cycle of 10 percent and a pulse width of 100 us. The RFMR29-SFEM-200-400A is equipped with a circulator that provides duplex functions and a limiter diode to protect the receiver. The bias sequence circuit is included. The RFMR29-SFEM-200-400A is fabricated on our cutting edge GaN on SiC technology, resulting in higher power density, efficiency, wider bandwidth and efficient thermal management. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms.