Ampleon has released a high efficiency, 750 W LDMOS power transistor covering 902 to 928 MHz. The BLF0910H9LS750P achieves a "best-in-class" efficiency of 72.5 percent at 915 MHz, according to the company. Characteristic of LDMOS, the power transistor will withstand a load mismatch of 10:1 VSWR through all phase angles. Ampleon has designed the device with a pre-matched input to make integration into the end application easier.

The performance and rugged design make the BLF0910H9LS750P well-suited for industrial, medical, commercial cooking and other RF energy applications. The device’s high efficiency minimizes the amount of energy used for a given output power, reducing operating cost and heat dissipation, while enabling simpler, lower cost cooling solutions and more compact systems. The rugged device helps simplify system design, needing less sophisticated circuit protection, which reduces the bill of materials and improves manufacturing yield.

The power transistor is fabricated on Ampleon’s Gen9HV 50 V LDMOS process, which has the maturity to ensure product consistency.

The BLF0910H9LS750P is available from Ampleon and its distributors, including Digikey and RFMW. Ampleon and its distributors provide comprehensive application support to help end-equipment manufacturers reduce the time to bring new products to market.