MACOM Technology Solutions has expanded its GaN on Si power amplifier (PA) portfolio with the introduction of the MAMG-100227-010 broadband PA module optimized for land mobile radio (LMR), public safety communications and military tactical communications and electronic countermeasures (ECM). Combing the design efficiencies of a fully-matched, 50 Ω, two-stage PA architecture with top-side and bottom-side mounting configurability, the MAMG-100227-010 provides design flexibility for radios with stringent size, weight and power (SWaP) specifications.
The MAMG-100227-010 is based on MACOM's GaN on Si process technology to achieve an extremely wide frequency bandwidth from 225 to 2600 MHz, providing 10 W CW output power, 40 percent power-added efficiency (PAE) over the band, 22 dB power gain and up to 36 V operation (28 V typical). Assembled in a compact 14 mm x 18 mm air-cavity laminate package with an integrated gold-plated copper heatsink, the MAMG-100227-010 eliminates the need for additional components and PCB area required by unmatched PAs, with top and bottom accessibility for improved mounting and heatsinking options.
MAMG-100227-010 PA modules are available to customers today.
“The MAMG-100227-010 builds on MACOM’s rich legacy of providing high performance GaN on Si solutions with field-proven reliability. For customers seeking exceptional design flexibility, the MAMG-100227-010 exemplifies the design and application expertise that MACOM provides across a wide range of broadband frequencies and power levels.” — Mark Murphy, senior director of marketing for RF power and base station products