Integra Technologies (www.integratech.com), a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, offers Gallium Nitride on Silicon Carbide (GaN-on-SiC) HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs.
Each kit is customized to include a designer’s transistor model of choice (partially or fully-matched options are available) and includes a test fixture with one transistor fully mounted and tested, and a second spare device. Full RF test results, as tested under key conditions by the Integra technical support team, are also provided as a reference guideline.
Learn more by downloading the Application Note “Handling and Adjustment of Integra Technologies GaN-on-SiC HEMT Evaluation Kits” at www.integratech.com/handling-and-adjustment-of-integra-technologies-gan-on-sic-hemt-transistor-evaluation-kits.
In this application note, Integra recommends comparing your measured data with their RF data for the serial number installed in the test fixture and reconciling any discrepancies before removing or changing the transistor.
To order an evaluation kit visit: https://www.integratech.com/get-a-quote-on-rf-power-devices/. These kits can be borrowed free for 30 days or be purchased to own.
