Integra Technologies is excited to attend this year’s European Microwave Week (EuMW) 2018, September 25 to 27 in Madrid, Spain.
At EuMW 2018, Integra will showcase their newly released high-power GaN on SiC transistor IGT5259CW25. Offering frequency coverage of 5.2 to 5.9 GHz, this device is best suited for C-Band CW radar applications. This transistor is fully-matched to 50-ohms, and offers a minimum of 25 W of output power at 36 V of drain bias.
Negative gate voltage and bias sequencing are required when utilizing this transistor. This device comes in Integra’s new package PL44C2. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
Stop by Booth #308/309 to chat with Integra’s sales representative, Trilight about Integra’s high-power capabilities and their line of new high-power X-Band devices to be released in 2019.
