NXP Semiconductors introduced two new power transistors for ISM, HF and VHF applications, a 100 W device in a TO-220 package and a 300 W device in a TO-247 package.

The combination of LDMOS process technology, assembled with well-established processes in ubiquitous TO-220 and TO-247 packages, supported with reference circuits that can be reused from 1.8 to 250 MHz yields RF transistors with multiple benefits: easy to design in, cost savings, fast time to market and a simple supply chain.

While current plastic packages for high-power RF require a precise solder reflow process, these transistors can be assembled on a PCB using standard through-hole technology, reducing cost. Heatsinking is simplified since the transistors can be mounted vertically to the chassis or in more creative and versatile ways, such as under the PCB. This expands options for the mechanical design, contributing to lowering the bill of materials and reducing time to market.

MRF300AN 300 W Transistor

Housed in a TO-247 package, the MRF300AN operates at 40.68 MHz and provides 330 W CW output power, with 79 percent efficiency and 28 dB gain. As part of NXP’s series of extremely rugged transistors, the transistor is designed for use in unforgiving industrial applications and can withstand VSWRs as high as 65:1.

This performance is supported by 2 in. x 3 in. (5.1 cm x 7.1 cm) reference designs that use cost-effective PCB material. Reference circuits are available for 27, 40.68, 81.36 and 230 MHz. With only a change of coils and discrete components — no change to the PCB layout — the board can be adapted to support any frequency from 1.8 to 250 MHz. This ensures quick design cycles.

The MRF300AN is available now.

MRF101AN 100 W Transistor

The 100 W MRF101AN, housed in a TO-220 package, is currently sampling, with production expected in September (2018).

For greater flexibility, each transistor comes in two mirror configurations. For example, the MRF101BN mirrors the pin-out of the MRF101AN, enabling a compact push-pull layout to address wideband applications without compromise efficiency.

The MRF101AN and MRF300AN target ISM applications, as well as HF and VHF communications. A new market application — switch-mode power supplies — is expected, since the power technology enables switching at higher frequencies than existing solutions, reducing the size of other components of the bill of materials.

NXP will be talking about these devices at IMS2018 in Philadelphia, June 12-14, 2018.