Wolfspeed, a Cree Company, has introduced a new series of 28 V GaN HEMT RF power devices, capable of higher frequency operation — to 8 GHz — with increased efficiency, higher gain and best-in-class reliability.

The new 28 V GaN HEMT devices are developed using Wolfspeed’s proven 0.25 µm GaN-on-SiC process and are designed with the same package footprint as the previous generation of 0.4 µm devices, enabling RF design engineers to use the new devises as drop-in replacements for the earlier devices. Available as both packaged (CG2H400 series) and bare die (CG2H800 series), the 0.25 µm GaN HEMTs deliver 33 percent higher frequency operation — to 8 GHz from 6 GHz — with a 5 to 10 percent boost in operating efficiency and an additional 1.5 to 2.0 dB of gain compared to Wolfspeed’s earlier generation devices.

The higher efficiency — up to 70 percent at P_SAT — and higher bandwidth makes these devices appropriate for RF power amplifiers in military communications, radar (UHF, L-, S-, C- and X-Band), electronic warfare and electronic counter-measures and commercial RF applications in the industrial, medical and scientific (ISM) band.

Jim Milligan, RF and microwave director at Wolfspeed, said, “By moving to our proven 0.25 µm process for these next-generation devices, we are able to deliver significant performance advantages to a wide range of customers, while maintaining the superior reliability these types of applications require. Offering these new devices in the same packages as our previous generation parts enables RF design engineers to quickly and easily boost the performance of their RF amplifiers.”

Packaged and Die Families

The CG2H400 Series include these packaged 28 V unmatched GaN HEMT devices, available in screw-down flange or solder-down pill packages:

• CG2H40010–10 W, 8 GHz operation with 70 percent efficiency (at P_SAT) and 18/16 dB small signal gain (at 2 and 4 GHz, respectively)
• CG2H40025–25 W, 6 GHz operation with 65 percent efficiency (at P_SAT) and 17/15 dB small signal gain (at 2 and 4 GHz, respectively)
• CG2H40045–45 W, 4 GHz operation with 60 percent efficiency (at P_SAT) and 18/14 dB small signal gain (at 2 and 4 GHz, respectively)

The CG2H800 Series include these bare die 28 V unmatched GaN HEMT devices:

• CG2H80015–15 W, 8 GHz operation with 65 percent efficiency (at P_SAT) and 17/12 dB small signal gain (at 4 and 8 GHz, respectively)
• CG2H80030–30 W, 8 GHz operation with 65 percent efficiency (at P_SAT) and 17/12 dB small signal gain (at 4 and 8 GHz, respectively)
• CG2H80060–60 W, 8 GHz operation with 65 percent efficiency (at P_SAT) and 15/12 dB small signal gain (at 4 and 8 GHz, respectively)

Compared to conventional Si and GaAs devices, Wolfspeed’s GaN-on-SiC portfolio delivers higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density and wider bandwidth, all of which are critical for achieving smaller, lighter and more efficient microwave and RF products. Wolfspeed GaN-on-SiC RF devices enable next-generation broadband, public safety and ISM amplifiers; broadcast, satellite and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation and two-way private radios.

Attendees of the European Microwave 2017 conference can learn more about these devices and the rest of Wolfspeed’s GaN RF portfolio, by visiting the company at Booth #195.