Richardson RFPD, Inc. announced the availability and full design support capabilities for a new RF power LDMOS transistor from NXP Semiconductors.

The AFM906NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

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Additional key features of the AFM906NT1 include:

  • Supply voltage (typ.): 7.5 V
  • P1dB (typ.): +37.8 dBm
  • P1dB (typ.): 6 W
  • Output power (typ.): 6.8 W
  • Power gain (typ.): 20.3 dB at 520 MHz
  • Efficiency (typ.): 70.8 percent

To find more information, or to purchase this product today online, please visit the AFM906NT1 webpage.