RFMW, Ltd. announces design and sales support for a high efficiency, high gain transistor from Qorvo. The Qorvo QPD3601 GaN power transistor has a P3dB of 180 W and 200 W Psat for Band 42 wireless communications infrastructure and microcell designs in the 3.4 to 3.6 GHz frequency range. Offering typical drain efficiency of 58 percent and linear gain of 22 dB, the QPD3601 draws 420mA from a 50 V supply. Qorvo offers this transistor in an eared, ceramic, air cavity package.